Advanced DRAM Lithography Engineer

Job description

Introduction

At IBM Research, we are the innovation engine of IBM. Exploring what’s next in computing and shaping the technologies the world will rely on tomorrow. From advancing AI and hybrid cloud to pioneering practical quantum computing, we anticipate challenges and unlock new opportunities for clients, partners, and society. Working in Research means joining a team that accelerates discovery at the intersection of high-performance computing, AI, quantum, and cloud.

You’ll collaborate with leading scientists, engineers, and visionaries to push boundaries and turn ideas into reality. With a culture built on curiosity, creativity, and collaboration, IBM Research offers the opportunity to grow your career while contributing to breakthroughs that transform industries and change the world.

Your role and responsibilities

We are seeking an experienced and innovative DRAM EUV Lithography Engineer to drive advanced DRAM technology research and development. This role is critical to enabling next-generation memory technologies through the development of leading-edge lithography solutions, including 0.33 NA and High-NA EUV lithography. The successful candidate will develop novel lithography processes that enable future DRAM physical and electrical architecture.

This individual will work closely with cross-functional teams spanning process, integration, metrology, and device engineering, while partnering with equipment and materials suppliers to overcome emerging technology challenges. The ideal candidate is a technical leader in DRAM patterning and EUV lithography with demonstrated expertise through industry experience, technical leadership, patents, publications, or significant project accomplishments.

This role requires both strategic vision and hands-on technical execution to define and implement lithography solutions from concept through implementation Required technical and professional expertise

• Bachelor's degree in Engineering, Materials Science, Physics, Chemistry, Electrical Engineering, or a related scientific discipline.
• Minimum 5 years of lithography experience, including EUV lithography and DRAM technology development experience.
• Demonstrated expertise in advanced semiconductor patterning and process development.
• Strong understanding of semiconductor lithography fundamentals and process integration.
• Experience solving complex technical challenges through root-cause analysis and model-based approaches.
• Proven ability to lead multi-functional projects and communicate effectively with internal and external collaborators

Education

• Master's degree or PhD in Engineering, Materials Science, Physics, Chemistry, Electrical Engineering, or a related scientific discipline.

Experience

• 8+ years of DRAM technology development experience.
• 8+ years of EUV lithography experience.
• 5+ years developing or influencing lithography roadmaps for DRAM technologies.
• Advanced understanding of photoresists, underlayers, pattern transfer, and materials interactions.
• Experience with computational lithography and lithography modeling.
• Strong publication, patent, or industry-recognized technical achievement record.
• Test vehicle and/or mask layout design experience.
• Computational lithography experience
• Experience with process transfer and yield improvement IBM is committed to creating a diverse environment and is proud to be an equal-opportunity employer.

All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, gender, gender identity or expression, sexual orientation, national origin, caste, genetics, pregnancy, disability, neurodivergence, age, veteran status, or other characteristics. IBM is also committed to compliance with all fair employment practices regarding citizenship and immigration status.