GaN RF Power Amplifier Design Intern

Job description

RF Power Amplifier Design Intern Role Overview

As a member of the RF Power Product Design team, the RF Power Amplifier Design Intern will work alongside experienced engineers providing mentoring, guidance, and introductions to colleagues. The design intern will be working at the Morgan Hill Design Center alongside a highly knowledgeable team of RF engineers and will initially be tasked with RF power device design of MACOM’s high power GaN transistor products geared towards, Multi Market, Base Station and 5G markets.

As an intern you will learn the handling RF devices, biasing devices, capturing accurate RF data and EM simulation. A follow-on activity will task the intern to design an impedance matching network for an amplifier, using either MWO or ADS design software, in order to match the device to a 50 ohm environment. The intern will be expected to layout the impedance matching network in AutoCAD, have the device sample and amplifier fabricated and will be tasked to assemble, solder components and tune the circuit on the RF bench.

Performance data of the measured amplifier will then be compared to the design simulation. This Internship with MACOM will help the Intern to gain valuable work experience in a key discipline, build professional relationships, and take ownership of a business-critical project.

During the 12 weeks each Intern will: > Be given an individual and well-defined project with set outcome goals > Gain hands on experience > Receive excellent training and ongoing supervision > Be invited to attend an intern webinar series > Attend networking/social events > Attend and present at Poster Session about each Interns project successes and pitfalls > Receive formal, written feedback