Wide Bandgap Device/PI Engineer (R&D)

Job description

Change the world. Love your job. TI is seeking an innovative and highly skilled GaN Device Project Lead Engineer to join our cutting-edge Gallium Nitride (GaN) Technology Development Team. This role offers the unique opportunity to work at the forefront of developing Gallium Nitride technology that is redefining the power electronics landscape — enabling higher efficiency, faster switching, and smaller, more reliable systems.

You will be instrumental in developing and scaling GaN power process technologies for high-volume manufacturing. You’ll collaborate across disciplines to deliver state-of-the-art devices with world-class performance and reliability. About the job This position is focused on leading the development, characterization and optimization of gallium nitride (GaN) power devices. As part of TI's Advanced Technology Development (ATD) team, the role involves close collaboration with fab/manufacturing, business units and Kilby Labs.

This position requires in-depth knowledge of III-nitride materials, device physics, and reliability.

The scope of the job includes, but not limited to: GaN device simulations (TCAD), device design, layout

• Develop robust process flows, drive design-of-experiment (DOE) execution, and solve complex integration challenges Collaboration with fab/manufacturing engineers to ensure device manufacturability Collaboration with reliability engineers to meet device reliability requirements Failure root-cause investigation for device/process/reliability/yield improvement The ideal candidate is expected to have a strong understanding of the following: Power FETs and other relevant semiconductor device physics Typical analog silicon and GaN high electron mobility transistor (HEMT) process flows and the underlying process physics Electrical and materials characterization methodologies and statistical data analysis
• Strong hands-on lab experience and excellent problem solving skills are also needed
• Excellent verbal and written communication skills are a must as the position requires interfacing with multiple teams

Qualifications

Minimum requirements

• Master's in Electrical Engineering, Electrical & Computer Engineering, Materials Engineering, Physics, or related degree
• 3+ years of hands-on experience in GaN or compound semiconductor device/process development
• Strong knowledge of semiconductor processing, especially in III-V materials Experience with process integration, DOE planning, electrical characterization, and failure analysis
• Proven ability to work across functional teams and drive results in a fast-paced R&D environment Preferred qualifications: PhD in Electrical Engineering, Electrical & Computer Engineering, Materials Engineering, Physics, or related degree
• Familiarity with GaN-on-Silicon technology for power switching applications Experience with fab tools and process modules/Integration
• Strong communication and data analysis skills
• Knowledge of device physics, reliability mechanisms, and packaging interaction is a plus.

Ability to work in teams and collaborate effectively with people in different functions Ability to take the initiative and drive for results Sound decision-making capabilities and the ability to prioritize tasks and adapt accordingly