APR/Physical Design Engineer 1

Job description

Job Description

'-Memory architecture design (SRAM, DRAM, MRAM, RRAM, PCRAM and eFlash) -Read and write critical path design and analysis -Design of key building blocks (sensing, analog, high voltage, DFT) -Chip-level design verification -Embedded non-volatile memory compiler and productization -Co-work with product/reliability engineer on silicon characterization and reliability qualification Qualifications: '-The candidates should have at least bachelor degree in relevant field.

• Memory experts in the field of SRAM.
• Familiar with bit cell characteristics (Vmin, bit cell performance, write margin), sense amplifier design, high sigma variation analysis, race check, margin signoff.
• Knowledge on high speed and low Vmin design is a plus.
• Highly welcome candidates who have less experience but have good Memory Design design experience, working attitude and are self-motivated.
• Good command of Japanese. English is a plus. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, or disability.