Principal Engineer

Job description

Job Summary

Principal Engineer, GaN Device Engineer , in charge of development of Gallium Nitride (GaN) power devices for high-efficiency power conversion. The candidate will possess expertise in GaN device design & physics to drive high performance/robustness technology. In addition, have an in-depth understanding of trapping mechanisms and relevant characterization techniques with hands-on experience. With strong communication skills in cross-functional teams to drive development path

Key Responsibilities

• Drive technical understanding of GaN device physics, charge trapping mechanisms, and device reliability behavior.
• Define and evaluate new device architectures to improve performance, robustness, and competitive differentiation.
• Technical leadership in advanced device characterization, data analysis, and root-cause investigation to drive performance/ yield/ reliability improvement
• Collaborate with cross-functional teams to guide technology development and accelerate commercialization of GaN products.

Qualifications

[Must] Ph.D. is preferred or M.S. in Electrical Engineering or a related field with 10+ years of semiconductor device R&D experience with major focus on GaN technology.

Hands-on experience with characterization techniques and trap analysis

Pulsed I-V (gate-lag and drain-lag), Transient drain current, MOS Interface trap analysis, but not limited as listed. Proven technical leadership and ability to work effectively across multidisciplinary teams. Fluent in both English/Chinese Business travel is required. [Good-to-Have] Experience with TCAD simulation such as Sentaurus or Silvaco. Reliability failure model and degradation mechanism Familiar with AEC-Q101 standard is “plus”