Semiconductor Process Development Intern

Job description

Semiconductor Process Development Intern – GaN on SiC HEMT Technology Overview: The Intern will work along experienced engineers that are part of RF Technology Development team with focus on key projects that advance MACOM’s technology roadmap. During the summer term, the Intern will have the opportunity to gain valuable hands-on fab experience, receive focused training and communicate the results in front of various engineering panels.

This internship is part of MACOM’s strategic effort for developing a pipeline of entry-level engineering positions so networking events and career development activities will be included into the schedule.

Requirements

• Enrollment into a B.S., M.S. or Ph.D. program in Electrical Engineering, Materials Science, Chemical Engineering or other STEM equivalent disciplines.
• Strong data analysis capability e.g. Excel, JMP
• Hands-on clean room experience is preferred and/or coursework familiarity with basic semiconductor processing (photolithography, plasma processes, physical/chemical vapor deposition, metrology, etc.).
• Semiconductor device physics and understanding of basic electrical tests is highly desired.
• Effective communication skills and ability to work independently.
• Due to ITAR Regulations, U.S. citizenship or permanent residency required.