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Taiwan Semiconductor · Yokohama or Osaka, JP

# APR/Physical Design Engineer 1

Yokohama or Osaka, JP Design 

Listed on Taiwan Semiconductor’s official careers site. Listed as of October 19, 2026. Check that it is still open and apply there.
[Apply on Taiwan Semiconductor’s careers site →](https://ro.careers.tsmc.com/job/Yokohama-or-Osaka-APRPhysical-Design-Engineer-1-14/776376310/)

[OpenNash Jobs](https://jobs.opennash.com/) / [Taiwan Semiconductor](https://jobs.opennash.com/companies/taiwan-semiconductor/) / APR/Physical Design Engineer 1

## Job description

### Job Description

'-Memory architecture design (SRAM, DRAM, MRAM, RRAM, PCRAM and eFlash) -Read and write critical path design and analysis -Design of key building blocks (sensing, analog, high voltage, DFT) -Chip-level design verification -Embedded non-volatile memory compiler and productization -Co-work with product/reliability engineer on silicon characterization and reliability qualification Qualifications: '-The candidates should have at least bachelor degree in relevant field.
- Memory experts in the field of SRAM.
- Familiar with bit cell characteristics (Vmin, bit cell performance, write margin), sense amplifier design, high sigma variation analysis, race check, margin signoff.
- Knowledge on high speed and low Vmin design is a plus.
- Highly welcome candidates who have less experience but have good Memory Design design experience, working attitude and are self-motivated.
- Good command of Japanese. English is a plus. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, or disability.

## At a glance
- Posted by the employer: Not stated
- First seen by OpenNash: Oct 19, 2026
- Last checked: Oct 19, 2026
- Listed for: Under a day
- Location: Yokohama or Osaka, JP[Apply on Taiwan Semiconductor’s careers site →](https://ro.careers.tsmc.com/job/Yokohama-or-Osaka-APRPhysical-Design-Engineer-1-14/776376310/)

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