[Skip to main content](#main-content) [OpenNash Jobs](https://jobs.opennash.com/) [Hiring report](/reports/hiring/) · [All GlobalFoundries jobs](https://jobs.opennash.com/companies/globalfoundries/) · [Search jobs](/search/) GlobalFoundries · Essex Junction, VT # RF Technology Development Device Engineer - MTS Essex Junction, Vermont, United States of America $98,000.00 - $176,000.00 Operations Listed on GlobalFoundries’s official careers site. Posted April 24, 2026. Check that it is still open and apply there. [Apply on GlobalFoundries’s careers site →](https://careers.gf.com/careers/job/563980769193015) [OpenNash Jobs](https://jobs.opennash.com/) / [GlobalFoundries](https://jobs.opennash.com/companies/globalfoundries/) / RF Technology Development Device Engineer - MTS ## Job description ### About GlobalFoundries GlobalFoundries is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GlobalFoundries makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit www.gf.com. ### Summary of Role GlobalFoundries is a leading full-service semiconductor foundry with a global manufacturing footprint spanning three continents. GlobalFoundries' RF Technology Development Organization is looking for a device and TCAD engineer with industry experience in developing semiconductor technologies to join our RF team in Essex Junction, VT. ### Essential Responsibilities - You will be responsible for TCAD simulation, design, electrical characterization and analysis of SiGe HBTs and RF CMOS devices - Conduct theoretical studies or simulations to optimize the device performance and benchmark it against state of the art - Work closely with process integration team for device fabrication work. - Establish new technology design rules, test structures and test methodologies - You will be responsible for the DC and RF characterization and analysis including high power measurements, s-parameter and loadpull - Own and drive technical process problem solving. - Data analysis - Team player - Interact with internal & external customers and respond to technical queries. - Innovate new methods of continuous process/device improvement. - Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements Other Responsibilities: · Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs. ### Education - Master’s Degree or PhD in Electrical, Materials Science, or other relevant engineering or physical science discipline. BS + 6-7 years of experience or MS + 5-6 years or PhD + 3-4 years ### Years of Experience - 3+ years in semiconductor device analysis and TCAD - Experience in Silicon CMOS or SiGe BiCMOS TCAD and device analysis - RF device design and characterization experience - Experience with Cadence or any other layout and simulation tool - Strong data analysis skills - Fluency in English Language – written & verbal - Ability to relocate to Essex Junction, VT Preferred Qualifications: - 5+ Years of Experience in Silicon or SiGe BiCMOS TCAD and device analysis - Experience of leading a device or process development project - Experience in RF device design and characterization including high frequency design, measurement and analysis - Experience in noise figure and loadpull measurement and analysis - Excellent interpersonal skills, energetic, motivated, and self-driven - Demonstrate ability to work well within a global matrixed team or environment with minimal supervision - Outstanding communication skills - both written and verbal - Demonstrated ability to communicate well with all levels of the organization and experience in working with external constituencies - Strong organizational skills; demonstrated ability to manage multiple tasks simultaneously and able to react to shifting priorities to meet business needs - Demonstrated ability to meet deadlines and commitments Expected Salary Range $98,000.00 - $176,000.00 The exact Salary will be determined based on qualifications, experience and location. If you need a reasonable accommodation for any part of the employment process, please contact us by email at usaccommodations@gf.com and let us know the nature of your request and your contact information. Requests for accommodation will be considered on a case-by-case basis. Please note that only inquiries concerning a request for reasonable accommodation will be responded to from this email address. An offer with GlobalFoundries is conditioned upon the successful completion of pre-employment conditions, as applicable, and subject to applicable laws and regulations. GlobalFoundries is fully committed to equal opportunity in the workplace and believes that cultural diversity within the company enhances its business potential. GlobalFoundries goal of excellence in business necessitates the attraction and retention of highly qualified people. Artificial barriers and stereotypic biases detract from this objective and may be illegally discriminatory. All policies and processes which pertain to employees including recruitment, selection, training, utilization, promotion, compensation, benefits, extracurricular programs, and termination are created and implemented without regard to age, ethnicity, ancestry, color, marital status, medical condition, mental or physical disability, national origin, race, religion, political and/or third-party affiliation, sex, sexual orientation, gender identity or expression, veteran status, or any other characteristic or category specified by local, state or federal law ## At a glance - Posted by the employer: Apr 24, 2026 - First seen by OpenNash: Jul 13, 2026 - Last checked: Oct 20, 2026 - Listed for: 179 days - Location: Essex Junction, Vermont, United States of America - Pay: $98,000.00 - $176,000.00[Apply on GlobalFoundries’s careers site →](https://careers.gf.com/careers/job/563980769193015) ## More jobs at GlobalFoundries ### [Advanced Packaging Process Integration Engineer](https://jobs.opennash.com/companies/globalfoundries/jobs/047b662921abb4087500/) Essex Junction, Vermont, United States of America ### [Fab Automation Engineer (2027 New College Graduate)](https://jobs.opennash.com/companies/globalfoundries/jobs/cc870d07b472159b9557/) Essex Junction, Vermont, United States of America ### [Facilities Engineer (2027 New College Graduate)](https://jobs.opennash.com/companies/globalfoundries/jobs/c2bef1508008c35e377c/) Essex Junction, Vermont, United States of America ### [Facilities Engineering Intern, Electrical Distribution Systems (Summer 2027)](https://jobs.opennash.com/companies/globalfoundries/jobs/f0b35feba01bfade35dd/) Essex Junction, Vermont, United States of America ### [Manager Module Engineering](https://jobs.opennash.com/companies/globalfoundries/jobs/eb0fea09ab4eecd78c96/) Essex Junction, Vermont, United States of America ## Similar jobs at other companies ### [Staff RF Hardware Engineer - Device Technology](https://jobs.opennash.com/companies/qualcomm/jobs/a9686a47cf018575398a/) Qualcomm · San Diego, California, United States of America ### [Device Modeling Engineer, Senior](https://jobs.opennash.com/companies/qualcomm/jobs/81ac01c952278ccf8c5e/) Qualcomm · Tijuana, Baja California, Mexico ### [Semiconductor Device Characterization Engineer](https://jobs.opennash.com/companies/bae-systems/jobs/1da3d2f11baf82f9718a/) BAE Systems · Nashua, New Hampshire, United States ### [Senior Staff Engineer, Power Device Modeling and Product Design](https://jobs.opennash.com/companies/infineon-technologies/jobs/7daea7a59ec6112011b5/) Infineon Technologies · El Segundo, CA ### [DRAM Device & Cell Technology Engineer](https://jobs.opennash.com/companies/micron-technology/jobs/ff586b444dc694054668/) Micron Technology · Boise, ID - Main Site OpenNash lists jobs from employers’ own careers sites and does not handle applications. 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